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AlGaN/GaNヘテロ界面に形成される2次元電子ガスの光学的特性
http://hdl.handle.net/10458/1599
http://hdl.handle.net/10458/1599cc721901-ae55-4f94-9ba5-01b8bfa642b5
名前 / ファイル | ライセンス | アクション |
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KJ00005014976.pdf (464.6 kB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2008-11-11 | |||||
タイトル | ||||||
言語 | ja | |||||
タイトル | AlGaN/GaNヘテロ界面に形成される2次元電子ガスの光学的特性 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Optical Properties of two dimensional electron gases at AlGaN/GaN hetero-structure interface | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | 2DEG, AlGaN/GaN, Photoluminescence, Surface photovoltage spectroscopy, carrier recombination | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
その他(別言語等)のタイトル | ||||||
その他のタイトル | AlGaN/GaN ヘテロ カイメン ニ ケイセイ サレル 2ジゲン デンシ ガス ノ コウガクテキ トクセイ | |||||
言語 | ja-Kana | |||||
著者 |
福山, 敦彦
× 福山, 敦彦× 有村, 光生× 井上, 麻衣子× 矢野, 伊織× 當瀬, 智之× 境, 貴洋× 碇, 哲雄× Arimura, Mitsuo× 井上, 麻衣子× 矢野, 伊織× Touse, Tomoyuki× Sakai, Kentaro |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | AlGaN/GaN hetero-structures have attracted much attention for their novel device applications. It is also known that a two-dimensional electron gas (2DEG) layer is formed by an accumulation of carriers due to a strong piezoelectric field in a distorted AlGaN layer at the interface. For the optical properties of the 2DEG, only a few reports on the photoluminescence (PL) measurements were published. No thorough discussion of the carrier transition mechanism is studied yet. We have then carried out the PL and surface photovoltage (SPV) measurements. Although the observed 2DEG signals in the PL spectra disappeared above 50K, SPV signal still existed even in the room temperature spectra. Since the SPV can detect the additional photo-induced electric field, the transition mechanism including carrier drift and accumulation can be discussed. The activation energy for the electron occupation was estimated at 9.3 meV from the SPV spectra. Therefore, the quantized level located 50meV, which is calculated by the PL results, below the conduction band may not directly contribute the signal. The Fermi energy in the quantum well should take into account for further discussion. | |||||
言語 | en | |||||
書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 37, p. 15-20, 発行日 2008-08-30 |
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出版者 | ||||||
言語 | ja | |||||
出版者 | 宮崎大学工学部 | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | Faculty of Engineering, University of Miyazaki | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 05404924 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00732558 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |