A self-limiting mechanism in atomic layer epitaxy (ALE) has been investigated for the heterogrowth of GaMnAs on
GaAs(001) substrate. In the ALE, trimethylgallium, bismethylcyclopentadienylmanganese and trismethylaminoarsine
were used as source materials of gallium, manganese and arsenic atoms, respectively. Although the growth of GaMnAs
was carried out at a high growth temperature of 500℃, a distinct self-limiting mechanism was observed for the
manganese alloy composition up to 6% and the epitaxial layer had no indications of including MnAs phase. The layer
showed an atomically flat surface morphology reflecting the self-limiting growth. The self-limiting mechanism was
largely affected by the lattice mismatch between GaMnAs epitaxial layer and GaAs substrate. When the manganese
alloy composition exceeded 7%, the self-limiting mechanism was broken and MnAs precipitates were observed in the
epitaxial layer.
雑誌名
Memoirs of the Faculty of Engineering, Miyazaki University
リポジトリのご案内
原子層エピタキシーによるGaMnAs/GaAs(001)成長
KJ00004682865.pdf
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