Abstract
When silicon ingots are cut into silicon wafers, work-affected layers are made on surfaces of
the wafers. These layers are removed in the chemical etching process. Recently, requested
specifications for the flatness of silicon wafers become threatening. Then, numerical analysis of
flows around wafers with chemical reactions is very important. Rotating silicon wafers (circular
disks) and stationary circular disks are set coaxially with alternation array in the etching bath.
Chemical reaction is composed of two stages. The first stage is oxidation with nitric acid, and
the second is hydrofluoric acid treatment. Owing to the CFD results, oxidation with nitric acid is
active near the tip of rotated circular disks. Secondary flows between rotating and stationary
disks are influenced with sizes of stationary disks. The stationary disks with smaller size make
secondary flows decrease. Then, the chemical reaction rate of hydrofluoric acid is enhanced
with smaller stationary disks and is speeded up near the tip of the wafer.
雑誌名
Memoirs of the Faculty of Engineering, Miyazaki University
リポジトリのご案内
シリコンウェハ製造のエッチングプロセスにおける化学反応を伴う流れの数値解析
KJ00004439515.pdf
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