Abstract
According as element densities in electronic circuit have become extremely high in recent
years, it is important to understand the information about surfaces and interfaces of materials.
Then, systems having topography and composition analyses are required. In this research, we
tried to build a compact and low price surface microanalysis system using laser ablation
ionization and time of flight mass spectrometer (TOF-MS). The mass resolution of the produced
equipment was two or less in mass-to-charge ratio. The minimum volume of mass for detection
was 3.3pg. We measured species and ablation threshold from natural silicon wafer and silica
glass. Based on the results, we explained the thermal dissociation mechanisms of silicon wafer
with the oxide film. We performed quantitative analysis for 4% BF2+ doped silicon wafer and
could determine the B+ composition.
雑誌名
Memoirs of the Faculty of Engineering, Miyazaki University
リポジトリのご案内
飛行時間型質量分析法による表面微量分析技術の開発
KJ00002425500.pdf
(539.76KB)
