Abstract
A self-limiting mechanism in atomic layer epitaxy (ALE) has been investigated for the
heterostructures and superlattices of III - V compounds. InAs/InAs(OO1), InAs/GaAs(OO1),
GaAs/InAs(OO1), InxGa1-xAs/GaAs(OOl), GaP/GaP(OO1), and GaP/GaAs(OO1), (InAs)m(GaAs)n/GaAs(OO1)
were grown by pulse-jet-epitaxy with trimethylgallium, trimethylindium, trisdimethylaminoarsine,
trisdimethylaminophosophine, arsine and phosphine as source materials. The self-limiting
mechanism was largely affected by lattice mismatch between epitaxial layer and the substrate and
by an atomic level suface morphology. The incorporation of misfit dislocation at the
heterointerface played an important role in the self-1limiting mechanism. The strained-layered
superlattice of (InAs)m(GaAs)n enabled us to grow InGaAS Iayer with an effectively high indium
composition.
雑誌名
Memoirs of the Faculty of Engineering, Miyazaki University
リポジトリのご案内
原子層エピタキシーによるInAs/GaAsとGaP/GaAsへテロ構造、歪超格子の成長機構の研究
KJ00003579353.pdf
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